Infineon BSP171PH6327XTSA1 P-channel MOSFET, 1.9 A, 60 V SIPMOS, 3+Tab-Pin SOT-223

BSP171PH6327XTSA1 Infineon  P-channel MOSFET, 1.9 A, 60 V SIPMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.6mm
Width:
3.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
300 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.9 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
RoHs Compliant
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This is P-channel MOSFET 1.9 A 60 V SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP171PH6327XTSA1. The product is available in surface mount configuration. The product sipmos, is a highly preferred choice for users. In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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