Infineon IPB011N04NGATMA1 N-channel MOSFET, 180 A, 40 V OptiMOS 3, 7-Pin D2PAK

IPB011N04NGATMA1 Infineon  N-channel MOSFET, 180 A, 40 V OptiMOS 3, 7-Pin D2PAK
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
188 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Width:
9.45mm
Length:
10.31mm
Maximum Drain Source Resistance:
1.1 mΩ
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
7
Transistor Configuration:
Single
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This is N-channel MOSFET 180 A 40 V OptiMOS 3 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB011N04NGATMA1. The product is available in surface mount configuration. The product optimos 3, is a highly preferred choice for users. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c.

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OptiMOS3 Power Transistor IPB011N04N G(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPB011N04NGATMA1 N-channel MOSFET, 180 A, 40 V OptiMOS 3, 7-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB011N04NGATMA1 N-channel MOSFET, 180 A, 40 V OptiMOS 3, 7-Pin D2PAK.
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