Infineon IPB065N15N3GATMA1 N-channel MOSFET, 130 A, 150 V OptiMOS 3, 7-Pin D2PAK

IPB065N15N3GATMA1 Infineon  N-channel MOSFET, 130 A, 150 V OptiMOS 3, 7-Pin D2PAK
Infineon

Product Information

Maximum Drain Source Voltage:
150 V
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.45mm
Width:
4.57mm
Length:
10.31mm
Maximum Drain Source Resistance:
6.8 mΩ
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
130 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
7
Transistor Configuration:
Single
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This is N-channel MOSFET 130 A 150 V OptiMOS 3 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB065N15N3GATMA1. The product is available in surface mount configuration. The product optimos 3, is a highly preferred choice for users. In addition, the height is 9.45mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.31mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c.

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IPB065N15N3G OptiMOS 3 Power Transistor(Technical Reference)

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