Infineon IPD031N03LGBTMA1 N-channel MOSFET, 90 A, 30 V OptiMOS 3, 3-Pin DPAK

IPD031N03LGBTMA1 Infineon  N-channel MOSFET, 90 A, 30 V OptiMOS 3, 3-Pin DPAK
IPD031N03LGBTMA1
Infineon

Product Information

Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
94 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.4 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 90 A 30 V OptiMOS 3 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD031N03LGBTMA1. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product optimos 3, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
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MOSFET N-ch 30V 90A OptiMOS3 TO252(Technical Reference)

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