Infineon IPD60R950C6ATMA1 N-channel MOSFET, 4.4 A, 650 V CoolMOS C6, 3-Pin DPAK

IPD60R950C6ATMA1 Infineon  N-channel MOSFET, 4.4 A, 650 V CoolMOS C6, 3-Pin DPAK
IPD60R950C6ATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
37 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
950 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 4.4 A 650 V CoolMOS C6 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD60R950C6ATMA1. The product is available in surface mount configuration. The product coolmos c6, is a highly preferred choice for users. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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IPx60R950C6, 600V CoolMOS C6 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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