Infineon IPD80R1K4P7ATMA1 N-channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin DPAK

IPD80R1K4P7ATMA1 Infineon  N-channel MOSFET, 4 A, 800 V CoolMOS P7, 3-Pin DPAK
IPD80R1K4P7ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
4 A
Width:
6.22mm
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
32 W
Series:
CoolMOS P7
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
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This is N-channel MOSFET 4 A 800 V CoolMOS P7 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R1K4P7ATMA1. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product coolmos p7, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IPD80R1K4P7, MOSFET 800V CoolMOS P7 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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