Infineon IPG20N06S2L35ATMA1 N-channel MOSFET, 20 A, 55 V OptiMOS, 8-Pin TDSON

IPG20N06S2L35ATMA1 Infineon  N-channel MOSFET, 20 A, 55 V OptiMOS, 8-Pin TDSON
IPG20N06S2L35ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
5.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
65 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
44 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 20 A 55 V OptiMOS 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N06S2L35ATMA1. Furthermore, the product is 5.9mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. The product is available in surface mount configuration. The product optimos, is a highly preferred choice for users. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IPG20N06S2L-35, OptiMOS Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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