Infineon IPP120P04P4L03AKSA1 P-channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin TO-220

IPP120P04P4L03AKSA1 Infineon  P-channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin TO-220
IPP120P04P4L03AKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Channel Type:
P
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
136 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
15.65mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.2 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 120 A 40 V OptiMOS P 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP120P04P4L03AKSA1. Furthermore, the product is 4.4mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in through hole configuration. The product optimos p, is a highly preferred choice for users. In addition, the height is 15.65mm. Whereas, the minimum operating temperature of the product is -55 °c.

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OptiMOS-P2 Power Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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