Infineon IPP60R190C6XKSA1 N-channel MOSFET, 20 A, 650 V CoolMOS C6, 3-Pin TO-220

IPP60R190C6XKSA1 Infineon  N-channel MOSFET, 20 A, 650 V CoolMOS C6, 3-Pin TO-220
Infineon

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
15.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
63 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
151 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
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This is N-channel MOSFET 20 A 650 V CoolMOS C6 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP60R190C6XKSA1. Furthermore, the product is 15.95mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. The product is available in through hole configuration. The product coolmos c6, is a highly preferred choice for users. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IPP60R190C6 CoolMOS C6 Power Transistor 600V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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