Infineon IPT059N15N3ATMA1 N-channel MOSFET, 155 A, 150 V OptiMOS 3, 8-Pin HSOF

IPT059N15N3ATMA1 Infineon  N-channel MOSFET, 155 A, 150 V OptiMOS 3, 8-Pin HSOF
Infineon

Product Information

Maximum Drain Source Voltage:
150 V
Typical Gate Charge @ Vgs:
69 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.4mm
Width:
10.1mm
Length:
10.58mm
Maximum Drain Source Resistance:
6.2 mΩ
Package Type:
HSOF
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
155 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 155 A 150 V OptiMOS 3 8-Pin HSOF manufactured by Infineon. The manufacturer part number is IPT059N15N3ATMA1. The product is available in surface mount configuration. The product optimos 3, is a highly preferred choice for users. In addition, the height is 2.4mm. Furthermore, the product is 10.1mm wide. Its accurate length is 10.58mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c.

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IPT059N15N3 OptiMOS 3 Power-Transistor, 150 V(Technical Reference)

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