Infineon IPW50R190CEFKSA1 N-channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247

IPW50R190CEFKSA1 Infineon  N-channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247
Infineon

Product Information

Maximum Continuous Drain Current:
18.5 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
47.2 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
127 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.85V
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 18.5 A 550 V CoolMOS CE 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW50R190CEFKSA1. Furthermore, the product is 5.21mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. The product is available in through hole configuration. The product coolmos ce, is a highly preferred choice for users. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IPW50R190CE MOSFET CoolMOS CE(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPW50R190CEFKSA1 N-channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Infineon IPW50R190CEFKSA1 N-channel MOSFET, 18.5 A, 550 V CoolMOS CE, 3-Pin TO-247.
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