Infineon IPW65R190CFDFKSA1 N-channel MOSFET, 17.5 A, 650 V CoolMOS CFD, 3-Pin TO-247

IPW65R190CFDFKSA1 Infineon  N-channel MOSFET, 17.5 A, 650 V CoolMOS CFD, 3-Pin TO-247
IPW65R190CFDFKSA1
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
68 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
151 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Width:
5.21mm
Length:
16.13mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
17.5 A
Transistor Material:
Si
Forward Diode Voltage:
0.9V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 17.5 A 650 V CoolMOS CFD 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R190CFDFKSA1. The product is available in through hole configuration. The product coolmos cfd, is a highly preferred choice for users. In addition, the height is 21.1mm. Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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IPW65R190CFD CoolMOS CFD2 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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