Infineon IRL3713PBF N-channel MOSFET, 260 A, 30 V HEXFET, 3-Pin TO-220AB

IRL3713PBF Infineon  N-channel MOSFET, 260 A, 30 V HEXFET, 3-Pin TO-220AB
Infineon

Product Information

Maximum Continuous Drain Current:
260 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
75 nC @ 4.5 V
Channel Type:
N
Length:
10.66mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
330 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 260 A 30 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRL3713PBF. Furthermore, the product is 4.82mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.66mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IRL3713SPbF, HEXFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRL3713PBF N-channel MOSFET, 260 A, 30 V HEXFET, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Infineon IRL3713PBF N-channel MOSFET, 260 A, 30 V HEXFET, 3-Pin TO-220AB.
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