Infineon IRL60S216 N-channel MOSFET, 298 A, 60 V StrongIRFET, 3-Pin D2PAK

IRL60S216 Infineon  N-channel MOSFET, 298 A, 60 V StrongIRFET, 3-Pin D2PAK
Infineon

Product Information

Maximum Continuous Drain Current:
298 A
Transistor Material:
Si
Width:
10.67mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
170 nC @ 4.5 V
Channel Type:
N
Length:
11.33mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
StrongIRFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.2 mΩ
RoHs Compliant
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This is N-channel MOSFET 298 A 60 V StrongIRFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRL60S216. Furthermore, the product is 10.67mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 11.33mm. The product is available in surface mount configuration. The product strongirfet, is a highly preferred choice for users. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IR MOSFET StrongIRFET IRL60S216 IRL60SL216(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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