Infineon IRLU120NPBF N-channel MOSFET, 10 A, 100 V HEXFET, 3-Pin IPAK

IRLU120NPBF Infineon  N-channel MOSFET, 10 A, 100 V HEXFET, 3-Pin IPAK
Infineon

Product Information

Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
20 nC @ 5 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
48 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
6.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
185 mΩ
RoHs Compliant
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This is N-channel MOSFET 10 A 100 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRLU120NPBF. Furthermore, the product is 2.3mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 6.1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IRLR120NPbF / IRLU120NPbF, HEXFET Power MOSFET Data sheet(July 2014)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793744 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number IRLU120NPBF.
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