Infineon SPB18P06PGATMA1 P-channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK

SPB18P06PGATMA1 Infineon  P-channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK
SPB18P06PGATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
18.6 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
P
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
81.1 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.25mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
130 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 18.6 A 60 V SIPMOS 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is SPB18P06PGATMA1. Furthermore, the product is 4.4mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in surface mount configuration. The product sipmos, is a highly preferred choice for users. In addition, the height is 9.25mm. Whereas, the minimum operating temperature of the product is -55 °c.

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SPB18P06P G, SIPMOS Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon SPB18P06PGATMA1 P-channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon SPB18P06PGATMA1 P-channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK.
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