Toshiba 2SK3564(STA4,Q,M) N-channel MOSFET, 3 A, 900 V, 3-Pin TO-220SIS

2SK3564-STA4-Q-M- Toshiba 2SK3564(STA4,Q,M) N-channel MOSFET, 3 A, 900 V, 3-Pin TO-220SIS
Toshiba

Product Information

Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W @ 25 °C
Maximum Gate Source Voltage:
+30 V
Height:
15mm
Forward Diode Voltage:
-1.9V
Maximum Drain Source Resistance:
4.3 Ω
RoHs Compliant
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This is N-channel MOSFET 3 A 900 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is 2SK3564(STA4,Q,M). Furthermore, the product is 4.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in through hole configuration. In addition, the height is 15mm.

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2SK3564 900V 3A N-channel MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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