Toshiba TK11Q65W,S1Q(S N-channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin IPAK

TK11Q65W-S1Q-S Toshiba TK11Q65W,S1Q(S N-channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin IPAK
Toshiba

Product Information

Maximum Continuous Drain Current:
11.1 A
Transistor Material:
Si
Width:
2.3mm
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Length:
6.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7.12mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
440 mΩ
RoHs Compliant
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This is N-channel MOSFET 11.1 A 650 V DTMOSIV 3-Pin IPAK manufactured by Toshiba. The manufacturer part number is TK11Q65W,S1Q(S. Furthermore, the product is 2.3mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.65mm. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 7.12mm.

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TK11Q65W,S1Q(S(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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