Toshiba TK15S04N1L,LQ(O N-channel MOSFET, 15 A, 40 V U-MOSVIII-H, 3-Pin DPAK

TK15S04N1L-LQ-O Toshiba TK15S04N1L,LQ(O N-channel MOSFET, 15 A, 40 V U-MOSVIII-H, 3-Pin DPAK
TK15S04N1L,LQ(O
Toshiba

Product Information

Maximum Continuous Drain Current:
15 A
Transistor Material:
Si
Width:
5.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46 W
Series:
U-MOSVIII-H
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
37 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 15 A 40 V U-MOSVIII-H 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK15S04N1L,LQ(O. Furthermore, the product is 5.5mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. In addition, the height is 2.3mm.

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TK15S04N1L, MOSFET N-Channel 40V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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