Toshiba TK16C60W,S1VQ(S2 N-channel MOSFET, 15.8 A, 600 V DTMOSIV, 3-Pin I2PAK

TK16C60W-S1VQ-S2 Toshiba TK16C60W,S1VQ(S2 N-channel MOSFET, 15.8 A, 600 V DTMOSIV, 3-Pin I2PAK
Toshiba

Product Information

Category:
Switching Regulator
Dimensions:
10 x 4.5 x 10.4mm
Maximum Continuous Drain Current:
15.8 A
Transistor Material:
Si
Width:
4.5mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
190 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1350 pF @ 300 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
10.4mm
Typical Turn-On Delay Time:
50 ns
Forward Diode Voltage:
1.7V
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 15.8 A 600 V DTMOSIV 3-Pin I2PAK manufactured by Toshiba. The manufacturer part number is TK16C60W,S1VQ(S2. The given dimensions of the product include 10 x 4.5 x 10.4mm. Furthermore, the product is 4.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 10.4mm.

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TK16C60W,S1VQ(S2(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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