Toshiba TK19A50W,S5X(M N-channel MOSFET, 18.5 A, 500 V DTMOSIV, 3-Pin TO-220SIS

TK19A50W-S5X-M Toshiba TK19A50W,S5X(M N-channel MOSFET, 18.5 A, 500 V DTMOSIV, 3-Pin TO-220SIS
TK19A50W,S5X(M
Toshiba

Product Information

Maximum Continuous Drain Current:
18.5 A
Transistor Material:
Si
Width:
4.5mm
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 18.5 A 500 V DTMOSIV 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK19A50W,S5X(M. Furthermore, the product is 4.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 15mm.

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TK19A50W,S5X(M(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Toshiba TK19A50W,S5X(M N-channel MOSFET, 18.5 A, 500 V DTMOSIV, 3-Pin TO-220SIS. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK19A50W,S5X(M N-channel MOSFET, 18.5 A, 500 V DTMOSIV, 3-Pin TO-220SIS.
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