Toshiba TK20J60W5,S1VQ(O N-channel MOSFET, 20 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P

TK20J60W5-S1VQ-O Toshiba TK20J60W5,S1VQ(O N-channel MOSFET, 20 A, 600 V DTMOSIV, 3+Tab-Pin TO-3P
Toshiba

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.5mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
N
Length:
15.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
165 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
175 mΩ
RoHs Compliant
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This is N-channel MOSFET 20 A 600 V DTMOSIV 3+Tab-Pin TO-3P manufactured by Toshiba. The manufacturer part number is TK20J60W5,S1VQ(O. Furthermore, the product is 4.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 15.5mm. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 20mm.

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TK20J60W5,S1VQ(O(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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