Toshiba TK30J25D,S1F(O N-channel MOSFET, 30 A, 250 V, 3-Pin TO-3PN

TK30J25D-S1F-O Toshiba TK30J25D,S1F(O N-channel MOSFET, 30 A, 250 V, 3-Pin TO-3PN
Toshiba

Product Information

Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Type:
N
Length:
15.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
260 W
Maximum Gate Source Voltage:
+20 V
Height:
20mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
60 mΩ
RoHs Compliant
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This is N-channel MOSFET 30 A 250 V 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is TK30J25D,S1F(O. Furthermore, the product is 4.5mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 15.5mm. The product is available in through hole configuration. In addition, the height is 20mm.

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TK30J25D N-channel MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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