Toshiba TK5Q60W,S1VQ(S N-channel MOSFET, 5.4 A, 600 V DTMOSIV, 3-Pin IPAK

TK5Q60W-S1VQ-S Toshiba TK5Q60W,S1VQ(S N-channel MOSFET, 5.4 A, 600 V DTMOSIV, 3-Pin IPAK
Toshiba

Product Information

Maximum Continuous Drain Current:
5.4 A
Transistor Material:
Si
Width:
2.3mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
900 mΩ
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC @ 10 V
Channel Type:
N
Length:
6.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7.12mm
Forward Diode Voltage:
1.7V
RoHs Compliant
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This is N-channel MOSFET 5.4 A 600 V DTMOSIV 3-Pin IPAK manufactured by Toshiba. The manufacturer part number is TK5Q60W,S1VQ(S. Furthermore, the product is 2.3mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.65mm. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 7.12mm.

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TK5Q60W,S1VQ(S(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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