Toshiba TK65G10N1 N-channel MOSFET, 136 A, 100 V, 3-Pin D2PAK

TK65G10N1 Toshiba  N-channel MOSFET, 136 A, 100 V, 3-Pin D2PAK
Toshiba

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
156 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
10.27mm
Length:
10.35mm
Maximum Drain Source Resistance:
4.5 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
136 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
4.46mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 136 A 100 V 3-Pin D2PAK manufactured by Toshiba. The manufacturer part number is TK65G10N1. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. Furthermore, the product is 10.27mm wide. Its accurate length is 10.35mm. In addition, the height is 4.46mm. It has a maximum operating temperature of +150 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Toshiba TK65G10N1 N-channel MOSFET, 136 A, 100 V, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK65G10N1 N-channel MOSFET, 136 A, 100 V, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16797958 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number TK65G10N1.
Yes. You can also search TK65G10N1 on website for other similar products.
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