Toshiba TPN30008NH,LQ(S N-channel MOSFET, 22 A, 80 V U-MOSVIII-H, 8-Pin TSON

TPN30008NH-LQ-S Toshiba TPN30008NH,LQ(S N-channel MOSFET, 22 A, 80 V U-MOSVIII-H, 8-Pin TSON
Toshiba

Product Information

Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
27 W
Series:
U-MOSVIII-H
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
30 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 22 A 80 V U-MOSVIII-H 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN30008NH,LQ(S. Furthermore, the product is 3.1mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. In addition, the height is 0.85mm.

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TPN30008NH, MOSFET N-Channel 80V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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