Maximum Continuous Drain Current:
35 A
Transistor Material:
SiC
Width:
5.21mm
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247-4
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 15 V, 35 nC @ 4 V
Channel Type:
N
Length:
16.13mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
113.5 W
Series:
C3M
Maximum Gate Source Voltage:
-8 V, +19 V
Height:
23.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4.8V
Maximum Drain Source Resistance:
90 mΩ
