Infineon IPN65R1K5CEATMA1 N-channel MOSFET, 5.2 A, 700 V CoolMOS CE, 3+Tab-Pin SOT-223

IPN65R1K5CEATMA1 Infineon  N-channel MOSFET, 5.2 A, 700 V CoolMOS CE, 3+Tab-Pin SOT-223
IPN65R1K5CEATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
5.2 A
Width:
3.7mm
Maximum Drain Source Voltage:
700 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
5 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.7mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
1.5 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 5.2 A 700 V CoolMOS CE 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IPN65R1K5CEATMA1. Furthermore, the product is 3.7mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. The product is available in surface mount configuration. The product coolmos ce, is a highly preferred choice for users. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -40 °c.

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IPN65R1K5CE, MOSFET 650V CoolMOS CE Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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