MOSFET N-Ch 200V 11A 125m OptiMOS3 TDSON

BSC12DN20NS3GATMA1 MOSFET N-Ch 200V 11A 125m OptiMOS3 TDSON
Infineon

Product Information

Maximum Continuous Drain Current:
11.3 A
Width:
6.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.5 nC @ 10 V
Channel Type:
N
Length:
5.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Series:
BSC12DN20NS3 G
Maximum Gate Source Voltage:
20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
125 mΩ
RoHs Compliant
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This is MOSFET N-Ch 200V 11A 125m OptiMOS3 TDSON manufactured by Infineon. The manufacturer part number is BSC12DN20NS3GATMA1. Furthermore, the product is 6.35mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 5.35mm. The product is available in surface mount configuration. The product bsc12dn20ns3 g, is a highly preferred choice for users. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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