Toshiba TK28E65W,S1X(S N-channel MOSFET, 27.6 A, 650 V DTMOSIV, 3-Pin TO-220

TK28E65W-S1X-S Toshiba TK28E65W,S1X(S N-channel MOSFET, 27.6 A, 650 V DTMOSIV, 3-Pin TO-220
TK28E65W,S1X(S
Toshiba

Product Information

Maximum Continuous Drain Current:
27.6 A
Transistor Material:
Si
Width:
4.45mm
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
75 nC @ 10 V
Channel Type:
N
Length:
10.16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.1mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
110 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 27.6 A 650 V DTMOSIV 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK28E65W,S1X(S. Furthermore, the product is 4.45mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 15.1mm.

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TK28E65W,S1X(S(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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