Toshiba TK62N60X,S1F(S N-channel MOSFET, 61.8 A, 600 V DTMOSIV-H, 3-Pin TO-247

TK62N60X-S1F-S Toshiba TK62N60X,S1F(S N-channel MOSFET, 61.8 A, 600 V DTMOSIV-H, 3-Pin TO-247
TK62N60X,S1F(S
Toshiba

Product Information

Maximum Continuous Drain Current:
61.8 A
Transistor Material:
Si
Width:
5.02mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
135 nC @ 10 V
Channel Type:
N
Length:
15.94mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
400 W
Series:
DTMOSIV-H
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.95mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
40 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 61.8 A 600 V DTMOSIV-H 3-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK62N60X,S1F(S. Furthermore, the product is 5.02mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 15.94mm. The product is available in through hole configuration. The product dtmosiv-h, is a highly preferred choice for users. In addition, the height is 20.95mm.

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TK62N60X,S1F(S(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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