MOSFET P-Ch 30V 8A HEXFET SOIC8

SI4435DYTRPBF MOSFET P-Ch 30V 8A HEXFET SOIC8
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
Si4435DYPbF
Maximum Gate Source Voltage:
20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
35 mΩ
Package Type:
SO-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1.2V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is MOSFET P-Ch 30V 8A HEXFET SOIC8 manufactured by Infineon. The manufacturer part number is SI4435DYTRPBF. The product is available in surface mount configuration. The product si4435dypbf, is a highly preferred choice for users. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of MOSFET P-Ch 30V 8A HEXFET SOIC8. You can also check on our website or by contacting our customer support team for further order details on MOSFET P-Ch 30V 8A HEXFET SOIC8.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16898473 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number SI4435DYTRPBF.
Yes. You can also search SI4435DYTRPBF on website for other similar products.
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