Toshiba TK7P65W,RQ(S N-channel MOSFET, 6.8 A, 650 V DTMOSIV, 3-Pin DPAK

TK7P65W-RQ-S Toshiba TK7P65W,RQ(S N-channel MOSFET, 6.8 A, 650 V DTMOSIV, 3-Pin DPAK
TK7P65W,RQ(S
Toshiba

Product Information

Maximum Continuous Drain Current:
6.8 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
60 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.3mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
800 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 6.8 A 650 V DTMOSIV 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK7P65W,RQ(S. Furthermore, the product is 6.1mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. In addition, the height is 2.3mm.

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ESD Control Selection Guide V1(Technical Reference)
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TK7P65W, MOSFET N-Channel 650V(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Toshiba TK7P65W,RQ(S N-channel MOSFET, 6.8 A, 650 V DTMOSIV, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK7P65W,RQ(S N-channel MOSFET, 6.8 A, 650 V DTMOSIV, 3-Pin DPAK.
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