Infineon IPB65R660CFDATMA1 N-channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin D2PAK

IPB65R660CFDATMA1 Infineon  N-channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin D2PAK
IPB65R660CFDATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
700 V
Typical Gate Charge @ Vgs:
22 nC
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Gate Source Voltage:
-30 V, +30 V
Series:
CoolMOS CFD
Maximum Drain Source Resistance:
660 mΩ
Maximum Gate Threshold Voltage:
4.5V
Height:
4.57mm
Width:
9.45mm
Length:
10.31mm
Minimum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 6 A 700 V CoolMOS CFD 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R660CFDATMA1. The product is available in surface mount configuration. The product coolmos cfd, is a highly preferred choice for users. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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IPX65R660CFD, CoolMOS CFD2 Power MOSFET Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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