Infineon IPI100N08S207AKSA1 N-channel MOSFET, 100 A, 75 V OptiMOS, 3-Pin I2PAK

IPI100N08S207AKSA1 Infineon  N-channel MOSFET, 100 A, 75 V OptiMOS, 3-Pin I2PAK
Infineon

Product Information

Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
144 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.25mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.1 mΩ
Checking for live stock

This is N-channel MOSFET 100 A 75 V OptiMOS 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IPI100N08S207AKSA1. Furthermore, the product is 4.4mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in through hole configuration. The product optimos, is a highly preferred choice for users. In addition, the height is 9.25mm. Whereas, the minimum operating temperature of the product is -55 °c.

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OptiMOS® Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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