Nch 650V 9A Power MOSFET

R6509KNJTL Nch 650V 9A Power MOSFET
ROHM

Product Information

Maximum Continuous Drain Current:
9 A
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-263S
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16.5 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
94 W
Series:
R6509KNJ
Maximum Gate Source Voltage:
±30 V
Height:
4.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
580 mΩ
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This is Nch 650V 9A Power MOSFET manufactured by ROHM. The manufacturer part number is R6509KNJTL. Furthermore, the product is 9.2mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. The product is available in surface mount configuration. The product r6509knj, is a highly preferred choice for users. In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)

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