Nch 190V 10A Power MOSFET

RD3S100CNTL1 Nch 190V 10A Power MOSFET
ROHM

Product Information

Maximum Continuous Drain Current:
10 A
Width:
6.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
190 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
52 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
85 W
Series:
RD3S100CN
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
182 mΩ
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This is Nch 190V 10A Power MOSFET manufactured by ROHM. The manufacturer part number is RD3S100CNTL1. Furthermore, the product is 6.4mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. The product is available in surface mount configuration. The product rd3s100cn, is a highly preferred choice for users. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)

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