SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix

SiA106DJ-T1-GE3  N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix
Vishay Siliconix

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SC-70-6L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.9 nC @ 10 V
Channel Type:
N
Length:
2.2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
19 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
20 mΩ
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This is N-Channel MOSFET 12 A 60 V TrenchFET 6-Pin SC-70 manufactured by Vishay Siliconix. The manufacturer part number is SiA106DJ-T1-GE3. Furthermore, the product is 1.35mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. The product is available in surface mount configuration. The product trenchfet, is a highly preferred choice for users. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)

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