MOSFET 600V 28A w/Fast Diode D2PAK

SIHB28N60EF-GE3 MOSFET 600V 28A w/Fast Diode D2PAK
SIHB28N60EF-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 W
Series:
EF Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
123 mΩ
RoHs Compliant
Checking for live stock

This is MOSFET 600V 28A w/Fast Diode D2PAK manufactured by Vishay. The manufacturer part number is SIHB28N60EF-GE3. Furthermore, the product is 9.65mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. The product is available in surface mount configuration. The product ef series, is a highly preferred choice for users. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c.

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SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode(Technical Reference)

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