MOSFET 600V 70A w/Fast Diode TO-247AC

SIHG70N60EF-GE3 MOSFET 600V 70A w/Fast Diode TO-247AC
SIHG70N60EF-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
253 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
520 W
Series:
EF Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
38 mΩ
RoHs Compliant
Checking for live stock

This is MOSFET 600V 70A w/Fast Diode TO-247AC manufactured by Vishay. The manufacturer part number is SIHG70N60EF-GE3. Furthermore, the product is 5.31mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. The product is available in through hole configuration. The product ef series, is a highly preferred choice for users. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c.

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SiHG70N60EF, EF Series Power MOSFET with Fast Body Diode(Technical Reference)

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FAQs

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