SiHG64N65E-GE3 N-Channel MOSFET, 64 A, 650 V E Series, 3-Pin TO-247AC Vishay

SIHG64N65E-GE3 SiHG64N65E-GE3 N-Channel MOSFET, 64 A, 650 V E Series, 3-Pin TO-247AC Vishay
SIHG64N65E-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
239 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
520 W
Series:
E Series
Maximum Gate Source Voltage:
-30 V, +30 V
Channel Type:
N
Maximum Drain Source Resistance:
47 mΩ
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
64 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is SiHG64N65E-GE3 N-Channel MOSFET 64 A 650 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SIHG64N65E-GE3. The product is available in through hole configuration. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c.

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SiHG64N65E, E Series Power MOSFET(Technical Reference)

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