EF Series Power MOSFET With Fast Body Di

SIHA22N60EF-GE3 EF Series Power MOSFET With Fast Body Di
Vishay

Product Information

Maximum Continuous Drain Current:
19 A
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
33 W
Maximum Gate Source Voltage:
±30 V
Height:
15.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
182 mΩ
RoHs Compliant
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This is EF Series Power MOSFET With Fast Body Di manufactured by Vishay. The manufacturer part number is SIHA22N60EF-GE3. Furthermore, the product is 4.7mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. The product is available in through hole configuration. In addition, the height is 15.3mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet SIHA22N60EF-GE3(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of EF Series Power MOSFET With Fast Body Di. You can also check on our website or by contacting our customer support team for further order details on EF Series Power MOSFET With Fast Body Di.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18211518 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number SIHA22N60EF-GE3.
Yes. You can also search SIHA22N60EF-GE3 on website for other similar products.
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