EF Series Power MOSFET With Fast Body Di

SIHD186N60EF-GE3 EF Series Power MOSFET With Fast Body Di
Vishay

Product Information

Maximum Continuous Drain Current:
19 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
156 W
Maximum Gate Source Voltage:
±30 V
Height:
2.25mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
201 mΩ
RoHs Compliant
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This is EF Series Power MOSFET With Fast Body Di manufactured by Vishay. The manufacturer part number is SIHD186N60EF-GE3. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. In addition, the height is 2.25mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet SIHD186N60EF-GE3(Technical Reference)

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FAQs

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