E Series Power MOSFET IPAK (TO-251), 144

SIHU4N80AE-GE3 E Series Power MOSFET IPAK (TO-251), 144
Vishay

Product Information

Maximum Continuous Drain Current:
4.1 A
Width:
2.38mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
±30 V
Height:
6.22mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.44 Ω
RoHs Compliant
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This is E Series Power MOSFET IPAK (TO-251) 144 manufactured by Vishay. The manufacturer part number is SIHU4N80AE-GE3. Furthermore, the product is 2.38mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in through hole configuration. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet SIHU4N80AE-GE3(Technical Reference)

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