E Series Power MOSFET TO-247AD

SIHW21N80AE-GE3 E Series Power MOSFET TO-247AD
Vishay

Product Information

Maximum Continuous Drain Current:
17.4 A
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247AD
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
16.26mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
32 W
Maximum Gate Source Voltage:
±30 V
Height:
21.46mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
235 mΩ
RoHs Compliant
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This is E Series Power MOSFET TO-247AD manufactured by Vishay. The manufacturer part number is SIHW21N80AE-GE3. Furthermore, the product is 5.31mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 16.26mm. The product is available in through hole configuration. In addition, the height is 21.46mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet SIHW21N80AE-GE3(Technical Reference)

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