MOSFET PowerPAK 1212-8SH 1G

SiSH101DN-T1-GE3 MOSFET PowerPAK 1212-8SH 1G
Vishay

Product Information

Maximum Continuous Drain Current:
35 A
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
PowerPAK 1212-8SH
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
68 nC @ 15 V
Channel Type:
P
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
±25 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
13 mΩ
RoHs Compliant
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This is MOSFET PowerPAK 1212-8SH 1G manufactured by Vishay. The manufacturer part number is SiSH101DN-T1-GE3. Furthermore, the product is 3.3mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. The product is available in surface mount configuration. In addition, the height is 0.93mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet SiSH101DN-T1-GE3(Technical Reference)

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