Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
9.28mm
Width:
4.82mm
Length:
10.28mm
Maximum Drain Source Resistance:
196 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
196mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Power Dissipation (Max):
2.4W (Ta), 62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTP2955
ECCN:
EAR99
