Maximum Continuous Drain Current:
26 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
Power 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.2 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
13A, 26A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
827pF @ 15V
standardLeadTime:
41 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Powerclip-33
Power - Max:
800mW, 900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDPC8013
ECCN:
EAR99
