Maximum Drain Source Voltage:
50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1mm
Width:
1.4mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
130 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
Die
Rds On (Max) @ Id, Vgs:
8Ohm @ 150mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
225mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
30 pF @ 25 V
standardLeadTime:
28 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
Die
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSS84
ECCN:
EAR99
