Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
62 nC @ 3.8 V nC
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
3.3 W
Maximum Gate Source Voltage:
±8 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.14mm
Width:
1.8mm
Length:
3.57mm
Package Type:
WLCSP
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
40 A
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
10
Transistor Configuration:
Dual
FET Feature:
Logic Level Gate, 2.5V Drive
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
10-SMD, No Lead
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 6V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Configuration:
2 N-Channel (Dual) Common Drain
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12V
Moisture Sensitivity Level (MSL):
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
10-WLCSP (3.54x1.77)
Power - Max:
3.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
EFC2K103
ECCN:
EAR99
